npn TIP100-101-102 04/10/2012 comset semiconductors 1 | 3 semiconductors silicon darlington power transistors npn epitaxial-base transistors in a monolithic dalrington circuit and housed in a to-220 enveloppe. they are designed for general purpose amplifier and low-speed switching applications. pnp complements are tip105-106-107 compliance to rohs. absolute maximum ratings symbol ratings value unit v cbo collector-base voltage TIP100 60 v tip101 80 tip102 100 v ceo collector-emitter voltage TIP100 60 v tip101 80 tip102 100 v ebo emitter-base voltage TIP100 5 v tip101 tip102 i c collector current TIP100 8 a tip101 tip102 i cm collector peak current TIP100 15 a tip101 tip102 i b base current TIP100 1 a tip101 tip102 p t power dissipation @ t c < 25 TIP100 80 watts tip101 tip102 @ t a < 25 TIP100 2 tip101 tip102 t j junction temperature TIP100 150 c tip101 tip102 t s storage temperature range TIP100 -65 to +150 tip101 tip102 http://www..net/ datasheet pdf - http://www..net/
npn TIP100-101-102 04/10/2012 comset semiconductors 2 | 3 semiconductors thermal characteristics symbol ratings value unit r thj-case from junction-case 1.56 c/w r thj-amb from junction-ambient 62.5 c/w electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i cbo collector cutoff current i e = 0,v cb = v cbo max TIP100 - - 50 a tip101 tip102 i ceo collector cutoff current i e = 0, v ce = 1/2 v ceo max TIP100 - - 50 a tip101 tip102 i ebo emitter cutoff current v eb = 5 v, i c = 0 TIP100 - - 8 ma tip101 tip102 v ceo collector-emitter breakdown voltage (*) i c = 30 ma, i b = 0 TIP100 60 - - v tip101 80 - - tip102 100 - - v ce(sat) collector-emitter saturation voltage (*) i c = 3 a, i b = 6 ma TIP100 - - 2 v tip101 tip102 i c = 8 a, i b = 80 ma TIP100 - - 2.5 tip101 tip102 v be(on) base-emitter voltage (*) i c = 8 a, v ce = 4 v TIP100 - - 2.8 v tip101 tip102 h fe dc current gain (*) v ce = 4 v, i c = 3 a TIP100 1000 - 20k - tip101 tip102 v ce = 4 v, i c = 8 a TIP100 200 - - tip101 tip102 c ob output capacitance i e = 0, v cb = 10 v f = 1mhz TIP100 - - 200 pf tip101 tip102 (*) pulse width 300 s, duty cycle 2.0% http://www..net/ datasheet pdf - http://www..net/
npn TIP100-101-102 04/10/2012 comset semiconductors 3 | 3 semiconductors mechanical data case to-220 dimensions (mm) min. max. a 9,90 10,30 b 15,65 15,90 c 13,20 13,40 d 6,45 6,65 e 4,30 4,50 f 2,70 3,15 g 2,60 3,00 h 15,75 17.15 l 1,15 1,40 m 3,50 3,70 n - 1,37 p 0,46 0,55 r 2,50 2,70 s 4,98 5,08 t 2.49 2.54 u 0,70 0,90 september 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com pin 1 : base pin 2 : collector pin 3 : emitter case : collector http://www..net/ datasheet pdf - http://www..net/
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